Development of new circuit with CSA for X-ray astronomical SOI pixel detector - improving energy resolution
Development of new circuit with CSA for X-ray astronomical SOI pixel detector - improving energy resolution
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与 CSA 一起开发用于 X 射线天文 SOI 像素探测器的新电路 - 提高能量分辨率
DOI：
10.1109/nssmic.2013.6829699
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
A. Iwata
中科院分区：
文献类型：
--
作者：
A. Takeda;Y. Arai;T. Tsuru;Takaaki Tanaka;S. Nakashima;Hideaki Matsumura;T. Imamura;T. Ohmoto;A. Iwata
我们一直在开发采用绝缘体上硅（SOI）CMOS技术的单片有源像素传感器，用于未来的X射线天文卫星使命。我们的目标是通过提供高符合时间分辨率（~ 50 ns）、上级命中位置读出时间（~ 10 μs）和更宽的带通（0.5 - 40 keV）来取代X射线电荷耦合器件（CCD），这是该领域的标准探测器，此外，在成像光谱学中具有相当的性能。为了实现这种探测器，我们开发了原型探测器，称为“XRPIX”系列。XRPIX在每个像素中包含比较器电路，以检测X射线光子注入;它提供像素内命中触发（定时）和二维命中模式（位置）输出。因此，XRPIX能够直接访问选定的像素以读出信号幅度。在我们以前的研究中，我们评估了它的基本性能，并获得了该系统的X射线光谱。下一步是改善光谱性能。然后，我们设计了一个新的原型，称为“XRPIX 3”，它具有电荷敏感放大器（CSA）在每个像素。带CSA的像素电路工作良好。与普通像素电路相比，增益提高了3.4倍。此外，XRPIX 3在我们的系列中首次成功地分辨了Mn-Kα和Mn-Kβ。读出噪声为33 e-rms，能量分辨率为300 eV半高宽（5.9keV）.在本文中，我们报告这种新设备的设计和测试结果。
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite mission. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (~ 50 ns), superior hit-position readout time (~ 10 μs), and wider bandpass (0.5 - 40 keV) in addition to having comparable performances in imaging spectroscopy. In order to realize this detector, we have developed prototype detectors, called “XRPIX” series. XRPIX contains comparator circuit in each pixel to detect an X-ray photon injection; it offers intra-pixel hit trigger (timing) and two-dimensional hit-pattern (position) outputs. Therefore, XRPIX is capable of direct access to selected pixels to read out the signal amplitude. In our previous study, we evaluated its basic performance and obtained the X-ray spectra by this system. The next step is improvement in spectroscopic performance. Then, we designed a new prototype, called “XRPIX3”, which has charge sensitive amplifier (CSA) in each pixel. The pixel circuit with CSA works good. It is 3.4 times higher gain as compared with normal pixel circuit. Furthermore, XRPIX3 resolved Mn-Kα and Mn-Kβ successfully for the first time in our series. The readout noise is 33 e- rms and the energy resolution is about 300 eV FWHM at 5.9 keV. In this paper, we report on the design and test results of this new device.
影响因子：
2.3
作者：
M. Kokubun;K. Makishima;T. Takahashi;T. Murakami;M. Tashiro;Y. Fukazawa;T. Kamae;G. Madejski
通讯作者：
M. Kokubun;K. Makishima;T. Takahashi;T. Murakami;M. Tashiro;Y. Fukazawa;T. Kamae;G. Madejski
SOI像素传感器的评估
DOI：
--
发表时间：
2008
期刊：
影响因子：
--
作者：
Ning Kang;Kazuya Suzuki;Eisuke Abe;Yoshiaki Hashimoto;Yasuhiro Iye;Shingo Katsumoto;Hirokazu Ishino
通讯作者：
Hirokazu Ishino