Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectrics
Influence of a Single Grain Boundary on Domain Wall Motion in Ferroelectrics
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DOI：
10.1002/adfm.201302457
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发表时间：
2014-03
影响因子：
19
通讯作者：
D. Marincel;Huairuo Zhang;Amit Kumar;S. Jesse;Sergei V. Kalinin;W. Rainforth;I. Reaney;C. Randall;S. Trolier-McKinstry
中科院分区：
文献类型：
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作者：
D. Marincel;Huairuo Zhang;Amit Kumar;S. Jesse;Sergei V. Kalinin;W. Rainforth;I. Reaney;C. Randall;S. Trolier-McKinstry
通过脉冲激光沉积在SrRuO 3涂覆的（100）SrTiO 3 24°倾斜角双晶衬底上沉积了425和611 nm厚的Pb（Zr0.45Ti0.55）O3（PZT）外延薄膜，以产生具有明确取向的单一PZT晶界。在双晶边界的两侧，薄膜显示出方形磁滞回线，并具有456和576的介电常数，分别为0.010和0.015的损耗角正切。使用压电响应力显微镜（PFM），在晶界附近（720-820 nm）观察到非线性压电响应的减少。该区域表示对压电响应的非本征贡献（例如，与畴密度/结构和/或畴壁迁移率相关的那些）受到晶界存在的影响。在晶界附近和远离晶界处收集的透射电子显微镜（TEM）图像表明，在晶界处强烈偏好（101）/（1 <$01）型畴壁，而在远离该区域处观察到（011）/（0 1 <$1）和（101）/（1 <$01）。提出晶界处的弹性应变场与铁电/弹性畴结构相互作用，稳定（101）/（1 <$01）型畴壁而不是（011）/（0 1 <$1）型畴壁，这抑制了畴壁在外加场下的运动，降低了非线性。
Epitaxial tetragonal 425 and 611 nm thick Pb(Zr0.45Ti0.55)O3 (PZT) films are deposited by pulsed laser deposition on SrRuO3‐coated (100) SrTiO3 24° tilt angle bicrystal substrates to create a single PZT grain boundary with a well‐defined orientation. On either side of the bicrystal boundary, the films show square hysteresis loops and have dielectric permittivities of 456 and 576, with loss tangents of 0.010 and 0.015, respectively. Using piezoresponse force microscopy (PFM), a decrease in the nonlinear piezoelectric response is observed in the vicinity (720–820 nm) of the grain boundary. This region represents the width over which the extrinsic contributions to the piezoelectric response (e.g., those associated with the domain density/configuration and/or the domain wall mobility) are influenced by the presence of the grain boundary. Transmission electron microscope (TEM) images collected near and far from the grain boundary indicate a strong preference for (101)/( 1¯ 01) type domain walls at the grain boundary, whereas (011)/(0 1¯ 1) and (101)/( 1¯ 01) are observed away from this region. It is proposed that the elastic strain field at the grain boundary interacts with the ferro‐electric/elastic domain structure, stabilizing (101)/( 1¯ 01) rather than (011)/(0 1¯ 1) type domain walls, which inhibits domain wall motion under applied field and decreases non‐linearity.