Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
复制标题
钝化晶体硅片有效少数载流子寿命的高级建模
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
B. Hoex
中科院分区：
文献类型：
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作者：
Fa‐Jun Ma;G. Samudra;M. Peters;A. Aberle;F. Werner;Jan Schmidt;B. Hoex
有效少数载流子寿命（τeff）的强注入水平依赖性通常在低注入水平下测量，用于由高电荷电介质膜对称钝化的未扩散晶体硅（c-Si）晶片。然而，这一现象尚未得到很好的理解。在这项工作中，我们集中在两个可能的物理机制，重现测量的c-Si晶片的原子层沉积的Al 2 O3对称钝化的τeff数据。第一个假设的缺陷区域的存在接近C-Si表面。第二个假设不对称的电子和空穴的寿命在散装。这两种解释都充分再现了n型和p型c-Si晶片的注入依赖性τeff。然而，如果有效表面电荷的极性被反转，建模还预测了两种建议机制的τeff的明显不同的注入依赖性。我们通过实验反转的有效表面的极性测试这个预测…
A strong injection level dependence of the effective minority carrier lifetime (τeff) is typically measured at low injection levels for undiffused crystalline silicon (c-Si) wafers symmetrically passivated by a highly charged dielectric film. However, this phenomenon is not yet well understood. In this work, we concentrate on two of those possible physical mechanisms to reproduce measured τeff data of c-Si wafers symmetrically passivated by atomic layer deposited Al2O3. The first assumes the existence of a defective region close to the c-Si surface. The second assumes asymmetric electron and hole lifetimes in the bulk. Both explanations result in an adequate reproduction of the injection dependent τeff found for both n- and p-type c-Si wafers. However, modeling also predicts a distinctly different injection dependence of τeff for the two suggested mechanisms if the polarity of the effective surface charge is inverted. We test this prediction by experimentally inverting the polarity of the effective surfac...