Low Cost and Solution Processed Interfacial Layer Based on Poly(2-ethyl-2-oxazoline) Nanodots for Inverted Perovskite Solar Cells
Low Cost and Solution Processed Interfacial Layer Based on Poly(2-ethyl-2-oxazoline) Nanodots for Inverted Perovskite Solar Cells
复制标题
用于倒置钙钛矿太阳能电池的基于聚（2-乙基-2-恶唑啉）纳米点的低成本和溶液处理界面层
DOI：
10.1021/acs.chemmater.6b00964
复制
发表时间：
2016-07-26
影响因子：
8.6
通讯作者：
He, Zhubing
中科院分区：
文献类型：
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作者：
Chen, Wei;Zhu, Yudong;He, Zhubing
有机金属卤化物钙钛矿材料（OHP）作为一种将太阳能转化为电能的上级转换材料的突破性发现，彻底改变了第三代太阳能电池的光伏竞争格局。基于高温处理金属氧化物支架的1− 6介孔结构主要用于制备钙钛矿太阳能电池，其光伏性能已达到20%以上。7，8由于OHP材料的双极传输特性，9，10平面异质结（PHJ）钙钛矿太阳能电池也已开发出高性能，其中钙钛矿膜夹在选择性电荷传输层之间，消除了对纳米结构（支架）电子受体的需要并简化了器件加工过程。11− 13 PHJ钙钛矿太阳能电池之一是所谓的倒置或PiN结构，其主要基于[6，6]-苯基-C61-丁酸甲酯（PCBM）作为电子收集层，非常有前途，14，15因为光电流滞后问题16能够被消除并且器件可以在低温下加工，这可以促进大规模和高产量的成本有效的制造。17 - 19然而，由于金属接触的费米能级（EF）与PCBM的HOMO能级之间的失配，PCBM与诸如Al、Ag或Au的金属电极之间的界面势垒将抑制从PCBM到电极的有效电子提取，这显著降低了最终器件性能。20，21这些界面处的适当能级对准对于降低接触势垒和确保优化的器件性能至关重要。为了实现这一点，已经采用了几种界面材料方法来修改PCBM/电极界面。具有优异性能的PiN钙钛矿太阳能电池已经通过热蒸发LiF，22，23钙或有机功能分子13，24 - 26的薄层或溶液处理金属氧化物（例如，TiOx或ZnO）27 - 29的薄层或有机缓冲层（例如，富勒烯衍生物和聚合物电解质）来实现。然而，需要真空工艺或复杂昂贵的材料来实现器件的制造，这可能会阻碍钙钛矿太阳能电池的大规模制造。
The breakthrough discovery of organometal halide perov-skite materials (OHP) as a superior converter to transform solar energy into electrical energy has completely changed the photovoltaic competition in the third-generation solar cells. 1− 6 Mesoporous structures based on high temperature treated metal oxide scaffold are mainly employed to fabricate perovskite solar cells, the photovoltaic performance of which has reached over 20%. 7, 8 Because of the ambipolar transport property of OHP materials, 9, 10 planar heterojunction (PHJ) perovskite solar cells have also been developed with high performance, where the perovskite film is sandwiched between selective charge transporting layers, obviating the need for a nanostructured (scaffold) electron acceptor and simplifying the device processing procedure. 11− 13 One of PHJ perovskite solar cells is so-called inverted or PiN structure that is mainly based on [6, 6]-phenyl-C61-butyricacid methyl (PCBM) as electron collecting layer is extremely promising, 14, 15 because the photocurrent hysteresis issue 16 is able to be eliminated and the device can be processed at low temperature, which can facilitate cost-effective fabrication on a large scale and with high throughput. 17− 19However, because of the mismatch between the Fermi level (EF) of the metal contact and the HOMO level of PCBM, the interfacial barriers between PCBM and metal electrodes such as Al, Ag or Au would suppress the effective electron extraction from PCBM to electrodes, which dramatically reduce the final device performances. 20, 21 Proper energy level alignment at these interfaces is critical to reduce contact barrier and ensure an optimized device performance. To achieve that, several interfacial materials approaches have been employed to modify the PCBM/electrode interface. PiN perovskite solar cells with excellent performance have been achieved via thermal evaporating a thin layer of LiF, 22, 23 calcium or organic functional molecules 13, 24− 26 or solution processing a thin layer of metal oxide (eg, TiOx or ZnO) 27− 29 or organic buffer layers (eg, fullerene derivatives and polymer electrolytes). 30− 33 Nevertheless, either a vacuum process or sophisticated expensive materials is required to achieve the fabricating of devices, which are likely to hinder the large scale fabrication of perovskite solar cells.