Mottness in two-dimensional van der Waals Nb 3 X 8 monolayers ( X = Cl , Br , and I )
Mottness in two-dimensional van der Waals Nb 3 X 8 monolayers ( X = Cl , Br , and I )
复制标题
二维范德华 Nb 3 X 8 单层中的莫特斯（X = Cl、Br 和 I）
DOI：
10.1103/physrevb.107.035126
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发表时间：
2023
影响因子：
3.7
通讯作者：
Jiangping Hu
中科院分区：
文献类型：
--
作者：
Yi Zhang;Yuhao Gu;Hongming Weng;Kun Jiang;Jiangping Hu
研究了二维范德华材料Nb3X8的强电子-电子相关效应。（X = Cl, Br， I）我们发现单层Nb3X8是接近强相关极限的理想体系。它们可以用半填充的单波段哈伯德模型来描述，其中哈伯德，U，和。带宽，W, U/W≈5-10。材料的莫特跃迁和磁跃迁都是由奴隶计算的。玻色子平均场理论。掺杂Mott态，发现了dx2−y2 + idxy超导对不稳定性。我们。并构造了两个滑动Nb3X8层的可调谐双层Hubbard系统。双层系统显示带绝缘子和莫特绝缘子之间的交叉
We investigate strong electron-electron correlation effects on two-dimensional van der Waals materials Nb3X8.(X = Cl, Br, I). We find that the monolayers Nb3X8 are ideal systems close to the strong correlation limit. They.can be described by a half-filled single band Hubbard model in which the ratio between the Hubbard, U, and.the bandwidth, W , U/W ≈ 5–10. Both Mott and magnetic transitions of the material are calculated by the slave.boson mean-field theory. Doping the Mott state, a dx2−y2 + idxy superconducting pairing instability is found. We.also construct a tunable bilayer Hubbard system for two sliding Nb3X8 layers. The bilayer system displays a.crossover between the band insulator and Mott insulator