High fluence effect on Si ripple morphology developed by low energy ion beam sputtering
High fluence effect on Si ripple morphology developed by low energy ion beam sputtering
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低能离子束溅射对硅波纹形貌的高注量效应
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
D. Ghose
中科院分区：
文献类型：
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作者：
Debasree Chowdhury;D. Ghose
本文研究了500 eV Ar ~+离子在入射角为65°时溅射Si表面涟漪形貌随离子注量的变化。涟漪波矢量的方向平行于离子束方向，遵循离子溅射的BH理论。在一定的能量密度下，波纹的有序性和振幅随着缺陷的减少而增加，但在较大的能量密度下，波纹的有序性和振幅趋于饱和。涟漪波长的粗化行为后，观察到一定的通量，显示在系统中的非线性的发展。对于高通量，涟漪图案既不消失，也没有表面表现出动力学粗糙化。这些结果进行了讨论的背景下，非线性连续模型。
The evolution of ripple morphology on Si surface has been studied as a function of ion fluence for 500 eV Ar+ ion sputtering at an incidence angle of 65°. The ripple wave vector is oriented parallel to the ion beam direction, following BH theory of ion sputtering. Up to certain fluence, the ripple ordering and amplitude is found to increase with simultaneous decrease of defects, but they tend to saturate at larger fluences. Coarsening behaviour of ripple wavelength is observed after a certain fluence showing the development of nonlinearity in the system. For high fluence, the ripple pattern neither disappears nor the surface exhibits kinetic roughening. These results are discussed in the context of non-linear continuum models.