β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
β-Al2xGa2-2xO3 Thin Film Growth by Molecular Beam Epitaxy
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DOI：
10.1143/jjap.48.070202
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发表时间：
2009-07-01
影响因子：
1.5
通讯作者：
Fujita, Shizuo
中科院分区：
文献类型：
--
作者：
Oshima, Takayoshi;Okuno, Takeya;Fujita, Shizuo
采用等离子体辅助分子束外延技术，在(100)取向的β-Ga2O单晶衬底上成功地生长了β-Al2xGa2-2xO3合金薄膜。薄膜的生长几乎是一致的，并且将β相保持到Al含量x=0.61。在Al含量x=0.4左右时，实现了阶跃流动生长，并观察到异质界面处有载流子积累。这些结果促进了对β-Al2xGa2-2xO3薄膜和相关器件的进一步研究，特别是用于大功率应用的高电子迁移率晶体管。(C)2009年日本应用物理学会DOI：10.1143/JJAP.48.070202
beta-Al2xGa2-2xO3 alloy thin films were successfully grown on (100)-oriented beta-Ga2O3 single-crystal substrates by plasma-assisted molecular beam epitaxy. The films were grown almost coherently and maintained the beta-phase up to an Al content of x = 0.61. Below an Al content of about x = 0.4, step-flow growth was achieved, and carrier accumulation was observed at the heterointerface. These results encourage further research into beta-Al2xGa2-2xO3 thin films and associated devices, especially high-electron-mobility transistors for high-power applications. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/JJAP.48.070202