The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride
The chemistry of the organometallic vapor-phase epitaxy of mercury cadmium telluride
复制标题
碲化汞镉有机金属气相外延化学
作者：
R. Hicks
本文综述了碲镉汞的有机金属气相外延（OMVPE），研究了薄膜生长、薄膜形态、异质外延、掺杂和反应器设计的化学基础。与III-V族化合物的OMVPE不同，II-VI族化合物的OMVPE的关键特征是本征反应动力学控制膜生长。表面和气相反应的速率决定了沉积速率和合金成分。因此，所产生的材料的质量对衬底温度和衬底上方的气体中的反应物的分布非常敏感。生长化学的另一个关键方面是碲化镉显示出在111（Te）取向上生长的强烈趋势。这使得难以在基底上建立逐层生长。
This review of the organometallic vapor-phase epitaxy (OMVPE) of mercury cadmium telluride examines the chemistry underlying film growth, film morphology, heteroepitaxy, doping, and reactor design. A key feature of the OMVPE of II-VI compounds, as distinguished from the OMVPE of III-V compounds, is that the intrinsic reaction kinetics control film growth. The rates of surface and gas-phase reactions determine the rate of deposition and the alloy composition. As a result, the quality of the material produced is very sensitive to the substrate temperature and the distribution of reactants in the gas above the substrate. Another crucial aspect of the growth chemistry is that cadmium telluride shows a strong tendency to grow in the 111(Te) orientation. This makes it difficult to establish layer-by-layer growth on the