Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices
Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices
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DOI：
10.1021/acsaelm.9b00575
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发表时间：
2020-01-01
影响因子：
4.7
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
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作者：
Oner, Bahar;Pomeroy, James W.;Kuball, Martin
电子设备小型化的趋势，从微米级到纳米级，提出了温度测量的挑战。可用的技术在分辨率、校准、采集时间或设备成本方面具有限制。在这里，我们展示了一种称为高光谱量子棒热成像（HQTI）的热成像技术，该技术利用量子棒的温度依赖性光致发光（PL）发射来获得偏置电子器件的表面温度图，并进行了简单的校准。这种方法使用相对简单、低成本的设备，同时实现亚微米空间分辨率。通过测量直流（dc）操作的氮化镓（GaN）高电子迁移率晶体管（HEMT）的热图，实现了类似于4摄氏度的温度精度和类似于700-800 nm的估计横向光学分辨率，证明了这种技术。这是一种多功能的方法，既可以测量亚微米级的感兴趣区域，也可以测量数百微米范围内的较大区域。
The trend of electronic device miniaturization, from the microscale to the nanoscale, presents a temperature measurement challenge. The available techniques have limitations in terms of either resolution, calibration, acquisition time, or equipment cost. Here we demonstrate a thermography technique called hyperspectral quantum rod thermal imaging (HQTI), which exploits temperature-dependent photoluminescence (PL) emission of quantum rods to obtain the surface temperature map of a biased electronic device, with a straightforward calibration. This method uses relatively simple, low-cost equipment, while achieving submicrometer spatial resolution. This technique is demonstrated by measuring the thermal map of a direct current (dc) operated gallium nitride (GaN) high electron mobility transistor (HEMT), achieving a temperature precision of similar to 4 degrees C and an similar to 700-800 nm estimated lateral optical resolution. This is a versatile method for measurement both in submicrometer scale regions of interest and of larger areas in the hundreds of micrometers range.