Optimum annealing condition for photoluminescence from β-FeSi2 balls grown by reactive deposition epitaxy and embedded in Si crystal
Optimum annealing condition for photoluminescence from β-FeSi2 balls grown by reactive deposition epitaxy and embedded in Si crystal
复制标题
反应沉积外延生长并嵌入硅晶体的 β-FeSi2 球光致发光的最佳退火条件
DOI：
10.1016/s0022-2313(99)00279-3
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发表时间：
2000
影响因子：
3.6
通讯作者：
F. Hasegawa
中科院分区：
文献类型：
--
作者：
T. Suemasu;Yusuke Iikura;K. Takakura;F. Hasegawa
经900℃退火后，直径为100 nm的β-FeSi2balls包埋在Si晶体中的1.5μm光致发光（PL）强度随着晶体质量的提高而大大提高。退火后样品的1.5μm PL热淬火强度明显低于生长样品。
1.5μm photoluminescence (PL) intensity from 100-nm-diameter β-FeSi2balls embedded in Si crystals was greatly improved by 900°C annealing in accordance with improvement of its crystalline quality. Thermal quenching of the 1.5μm PL intensity for the annealed sample was significantly reduced by annealing compared to the as-grown sample.