Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7×7
Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7×7
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DOI：
10.1063/1.2150598
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发表时间：
2006-01
影响因子：
3.2
通讯作者：
J. Sadowski;T. Nagao;S. Yaginuma;Y. Fujikawa;T. Sakurai;A. I. Oreshkin;M. Saito;T. Ohno
中科院分区：
文献类型：
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作者：
J. Sadowski;T. Nagao;S. Yaginuma;Y. Fujikawa;T. Sakurai;A. I. Oreshkin;M. Saito;T. Ohno
本文讨论了室温下在Si(111)-7×7表面上铋沉积初期形成的准立方结构和稳定性的扫描隧道显微镜(STM)研究和从头计算结果。扫描隧道显微镜实验结果表明，在最初形成的润湿层的顶部生长了成对的Bi012}薄膜，而在其下面保留了Si7×7晶格。当{012}薄膜由偶数个层数组成，只有偶数个层状的Bi012}岛是稳定的时，薄膜中的层间配对导致薄膜基本稳定。高分辨率的扫描隧道显微镜图像证实了薄膜弛豫引起的最顶层原子的屈曲。
We discuss the results of the scanning tunneling microscopy (STM) investigations and ab initio calculations of the structure and stability of the quasicubic Bi{012} film formed in the initial stage of the bismuth deposition on the Si(111)-7×7 surface at room temperature. Results of our STM experiments show that paired-layer Bi{012} film grows on top of the initially formed wetting layer, with the Si 7×7 lattice preserved underneath. The pairing of the layers in the {012} film leads to the substantial stabilization of the film when it consists of an even number of layers and only even-number layered Bi{012} islands are observed to be stable. The buckling of the atoms in the topmost paired layer induced by the relaxation of the film is evidenced by the high-resolution STM images.