MBE-grown long-wavelength interband cascade lasers on InAs substrates
MBE-grown long-wavelength interband cascade lasers on InAs substrates
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DOI：
10.1016/j.jcrysgro.2015.02.016
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发表时间：
2015-09-01
影响因子：
1.8
通讯作者：
Johnson, Matthew B.
中科院分区：
文献类型：
--
作者：
Li, Lu;Ye, Hao;Johnson, Matthew B.
采用分子束外延的方法在InAs衬底上生长出了发射波长接近11pm的带间级联（IC）激光器结构。通过光学显微镜、原子力显微镜和x射线衍射对缺陷和表面光洁度以及整体晶体质量进行了表征。广域集成电路激光器在连续波和脉冲模式下的最高工作温度分别为97 K和130 K，发射波长为11 pm，这是基于il - v半导体材料的带间激光器中最长的波长。80k时的脉冲阈值电流密度为72 A/cm(2)。这种集成电路激光器件的性能可能受到子带间吸收损耗和未识别的载流子泄漏通道的限制。Elsevier B.V.出版
An interband cascade (IC) laser structure vvith an emission wavelength designed to be near 11 pm was grown by molecular beam epitaxy on an InAs substrate. Defects and surface smoothness, as well as the overall crystalline quality, were characterized by optical microscopy, atomic force microscopy and X-ray diffraction. The maximum operating temperatures of a broad-area IC laser device in CW and pulsed modes were 97 K and 130 K, respectively, at an emission wavelength of 11 pm, which is the longest wavelength among interband lasers based on Ill-V semiconductor materials. The pulsed threshold current density at 80 K was measured to be 72 A/cm(2). The performance of this IC laser device may be limited by intersubband absorption loss in the active region and an unidentified carrier leakage channel. Published by Elsevier B.V.