Synthesis of second-order nonlinearities in dielectric-semiconductor-dielectric metamaterials
Synthesis of second-order nonlinearities in dielectric-semiconductor-dielectric metamaterials
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DOI：
10.1063/1.4978640
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发表时间：
2017-03-13
影响因子：
4
通讯作者：
Fainman, Yeshaiahu
中科院分区：
文献类型：
--
作者：
Lin, Hung-Hsi;Yang, Mu-Han;Fainman, Yeshaiahu
我们证明了一个大的有效的二阶非线性光学极化率的电子光学超材料的基础上溅射介质-半导体-介质多层膜的二氧化硅/非晶硅（a-Si）/氧化铝。在介电-半导体界面两侧具有相反符号的界面固定电荷（Q（f））导致a-Si层内的非零内建电场，其耦合到a-Si的大的三阶非线性极化率张量并诱导有效的二阶非线性极化率张量chi（（2））（eff）。有效chi（2）（eff）张量的最大分量的值，即，对于所制造的超材料，实验上确定χ（2）（zz，）为2 μ m/V，并且在后热退火工艺之后增加到8.5 μ m/V。成分和制造方法使这些超材料CMOS兼容，使芯片级硅光子集成电路的有效的非线性器件。出版社：AIP Publishing
We demonstrate a large effective second-order nonlinear optical susceptibility in electronic optical metamaterials based on sputtered dielectric-semiconductor-dielectric multilayers of silicon dioxide/ amorphous silicon (a-Si)/aluminum oxide. The interfacial fixed charges (Q(f)) with opposite signs on either side of dielectric-semiconductor interfaces result in a non-zero built-in electric field within the a-Si layer, which couples to the large third-order nonlinear susceptibility tensor of a-Si and induces an effective second-order nonlinear susceptibility tensor chi((2))(eff). The value of the largest components of the effective chi((2))(eff) tensor, i.e., chi((2))(zzz,) is determined experimentally to be 2 pm/V for the as-fabricated metamaterials and increases to 8.5 pm/V after the post-thermal annealing process. The constituents and fabrication methods make these metamaterials CMOS compatible, enabling efficient nonlinear devices for chip-scale silicon photonic integrated circuits. Published by AIP Publishing.