Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method
Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method
复制标题
DOI：
10.7567/1347-4065/ab14f9
复制
发表时间：
2019-04
影响因子：
1.5
通讯作者：
T. Hamachi;T. Tohei;Masayuki Imanishi;Y. Mori;A. Sakai
中科院分区：
文献类型：
--
作者：
T. Hamachi;T. Tohei;Masayuki Imanishi;Y. Mori;A. Sakai
We have investigated the local electrical and structural properties of threading dislocations (TDs) in Na-flux-grown GaN bulk single crystals that consist entirely of c-plane growth sectors. Conductive atomic force microscopy analysis of Schottky-like contacts locally fabricated on dislocation-related etch pits showed a variety of leakage current under reverse bias conditions. Microstructural analysis around TDs revealed a correlation between the current leakage and the structure of the TDs and their surroundings. Microscale faceted growth sectors with a higher oxygen impurity concentration locally formed in the vicinity of TDs had a larger influence on the current leakage than the structure of TDs.
