Transient, Biocompatible Electronics and Energy Harvesters Based on ZnO
Transient, Biocompatible Electronics and Energy Harvesters Based on ZnO
复制标题
DOI：
10.1002/smll.201300146
复制
发表时间：
2013-10-25
期刊：
影响因子：
13.3
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Dagdeviren, Canan;Hwang, Suk-Won;Rogers, John A.
半导体氧化物作为有源矩阵显示背板薄膜晶体管中硅的替代品越来越受到人们的关注；它们也在透明、灵活的电子设备和能量收集器中具有潜在的用途。尤其是氧化锌，具有良好的综合性能，包括在可见光波长范围内的良好透明度，[1]高电子迁移率，[2]和强烈的压电响应。[3]因此，氧化锌的形式从薄膜到线材和棒，已被探索在传感、[4-6]催化、[7，8]光发射、[9，10]压电转换、[11]和致动方面。[12]先前的工作还表明，氧化锌具有生物相容性，[13-15]，因此适合于集成在人体上或体内的设备。在这里，我们介绍几类基于氧化锌的电子设备，它们的关键属性是能够完全溶解在水或生物流体中。通过这种方式，氧化锌为物理瞬变形式的电子和传感器提供了硅[16]或有机半导体[17-20]的替代品，在能量采集、光发射和其他方面具有更大的能力。本文介绍的器件的其他组成材料包括用于电极和互连的镁(Mg)、用于介质的氧化镁(MgO)以及用于衬底和封装的丝素薄膜。这里使用的每种材料也是生物相容的，正如以前的报告所讨论的那样。[21，22，23-26]我们介绍了氧化锌薄膜晶体管和机械能量采集器(也用作应变计)的具体设计和制造方案。详细的研究揭示了溶解动力学，以及使用材料和设计选择来控制这种动力学的能力。实验/理论相结合的工作说明了该装置的主要操作特征。图1a和b提供了水溶性氧化锌薄膜晶体管(TFT)和机械能量采集器(Mehs)/应变计的原理图和图像。丝素片材提供了底物，在某些情况下，
Semiconducting oxides are of growing interest as replacements for silicon in thin film transistors for active matrix display backplanes; they are also of potential use in transparent, flexible electronics and energy harvesters. Zinc oxide (ZnO), in particular, has a favorable combination properties, including excellent transparency in the visible wavelength range,[1] high electron mobility,[2] and strong piezoelectric response.[3] As a result, ZnO, in forms ranging from films to wires and rods, has been explored in sensing,[4–6] catalysis,[7, 8] optical emission,[9, 10] piezoelectric transduction,[11] and actuation.[12] Previous work also suggests that ZnO is biocompatible,[13–15] and therefore suitable for devices that integrate on or in the human body. Here we introduce classes of ZnO based electronic devices that have, as their key attribute, the ability to dissolve completely in water or biofluids. In this way, ZnO provides an alternative to silicon [16] or organic semiconductors [17–20] for physically transient forms of electronics and sensors, with expanded capabilities in energy harvesting, light emission and others. The other constituent materials of the devices presented here include magnesium (Mg) for electrodes and interconnects, magnesium oxide (MgO) for the dielectrics, and films of silk fibroin for the substrate and package. Each material used here is also biocompatible, as discussed in previous reports.[21, 22, 23–26] We present specific designs and fabrication schemes for ZnO thin film transistors and mechanical energy harvesters (also for use as strain gauges). Detailed studies reveal the kinetics of dissolution and the ability to use materials and design choices to control this kinetics. Combined experimental/theoretical work illustrates the key operational features of the devices. Figure 1a and b provide a schematic diagram and an image of water-soluble ZnO thin film transistors (TFTs) and mechanical energy harvesters (MEHs)/strain gauges. Sheets of silk fibroin provide substrates and, in certain cases,