Photoswitching in Azafullerene Encapsulated Single-Walled Carbon Nanotube FET Devices
Photoswitching in Azafullerene Encapsulated Single-Walled Carbon Nanotube FET Devices
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DOI：
10.1021/ja810086g
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发表时间：
2009-03-18
影响因子：
15
通讯作者：
Hatakeyama, Rikizo
中科院分区：
文献类型：
--
作者：
Li, Yongfeng;Kaneko, Toshiro;Hatakeyama, Rikizo
将C59N@SWNTs组装到FET器件中，研究了它们的光致电输运特性。我们的发现表明，单壁碳纳米管中的氮杂富勒烯分子使纳米管FET器件对紫外光强暴露非常敏感，因为在强暴露时，源漏电流会降低。发现光开关效应依赖于光的波长，当波长增加到480 nm时，光开关效应变得可以忽略不计。由于C59N特殊的电子结构，其异质分子成键对光敏感，因此C59N@SWNTs内部发生了光致电子转移。
The photoinduced electrical transport properties of C59N@SWNTs are investigated by assembling them into FET devices. Our findings demonstrate that azafullerene molecules inside SWNTs make nanotube FET devices very sensitive to UV tight exposure by the decrease of source-drain current upon tight exposure. The photoswitching effect is found to be dependent on wavelengths of light and becomes negligible when the wavelength is increased to 480 nm. The photoinduced electron transfer is proposed to take place inside C59N@SWNTs due to the specific electronic structure of C59N, the heteromolecule bonding of which is sensitive to light.