SnGa2GeSe6, a benign addition to the AM(2)(III)M(IV)Q(6) family: synthesis, crystal structure and nonlinear optical performance
SnGa2GeSe6, a benign addition to the AM(2)(III)M(IV)Q(6) family: synthesis, crystal structure and nonlinear optical performance
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SnGa2GeSe6，AM(2)(III)M(IV)Q(6) 系列的良性补充：合成、晶体结构和非线性光学性能
DOI：
10.1039/c9dt00184k
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发表时间：
2019
影响因子：
4
通讯作者：
Wu Yicheng
中科院分区：
文献类型：
--
作者：
Li Zhuang;Zhang Shengzi;Guo Yangwu;Lin Zheshuai;Yao Jiyong;Wu Yicheng
首次用高温固相反应合成了AMIII2MIVQ6家族的新化合物SnGa2GeSe6。SnGa2GeSe6‘S晶体属非中心对称空间群Fdd2，晶胞尺寸a=47.195(9)ä，b=7.5213(15)ä，c=12.183(2)ä，Z=16。SnGa2GeSe6’S晶体结构由两种无限链(即1∞[GaSe3]链和1∞[M3Se7]链)组成的交错网络组成，其中M表示Ga和Ge原子以1 ： 1的比例随机占据的两个金属位。它类似于SnGa2GeS6，但由于含有立体化学活性孤对电子的锡原子取代了Ba，所以与其类似物有很大的不同。仔细的实验研究表明，SnGa2GeSe6具有1.98 eV的光学带隙和不一致的熔化行为。在2μm激光作用下，SnGa2GeSe_6粉末样品的倍频强度约为1.7×AgGaS_2，粒径为150~200μm。
A new selenide, SnGa2GeSe6, in the AMIII2MIVQ6 family was synthesized for the first time by a high-temperature solid-state reaction. It crystallized in the non-centrosymmetric space group Fdd2 with cell dimensions of a = 47.195(9) Å, b = 7.5213(15) Å, c = 12.183(2) Å, and Z = 16. SnGa2GeSe6's crystal structure is characterized by a crisscross network of two types of infinite chains (i.e. the 1∞[GaSe3] chain and the 1∞[M3Se7] chain, where M represents the two metal sites randomly occupied by Ga and Ge atoms in a 1 : 1 ratio), which is similar to SnGa2GeS6 and diverges strongly from its Ba analogue owing to the substitution of Ba with Sn atoms that contain stereochemically active lone pair electrons. Careful experimental research has revealed that SnGa2GeSe6 exhibits an optical band gap of 1.98 eV and incongruent melting behavior. Furthermore, the second harmonic generation (SHG) intensity of the SnGa2GeSe6 powder sample is about 1.7 × AgGaS2 at a particle size of 150–200 μm with a 2 μm laser as the fundamental light.