High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
High-quality single-crystal Ge stripes on quartz substrate by rapid-melting-growth
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DOI：
10.1063/1.3182795
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发表时间：
2009-07
影响因子：
4
通讯作者：
M. Miyao;K. Toko;Takanori Tanaka;T. Sadoh
中科院分区：
文献类型：
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作者：
M. Miyao;K. Toko;Takanori Tanaka;T. Sadoh
为了实现高速工作的先进薄膜晶体管(TFT)，人们希望在透明绝缘衬底上生长单晶Ge。我们利用多晶硅岛作为生长晶种，发展了非晶态Ge的快速熔融生长工艺。在石英衬底上生长出了长度为40 0μm的高质量、以(10 0)取向为主的单晶Ge条带。电导率与温度的关系表明，S的空穴迁移率高达1040cm2/V，这为具有高载流子迁移率的Ge沟道TFT提供了可能性。
Single-crystal Ge on a transparent insulating substrate is desired to achieve advanced thin-film transistors (TFTs) with high speed operation. We have developed the rapid-melting-growth process of amorphous Ge by using polycrystalline Si islands as the growth seed. High-quality and dominantly (100)-oriented single-crystal Ge stripes with 400 μm length are demonstrated on quartz substrates. The temperature dependence of the electrical conductivity shows a high hole mobility of 1040 cm2/V s. This method opens up a possibility of Ge-channel TFT with the high carrier mobility.