Chemical disorder as an engineering tool for spin polarization in Mn3Ga-based Heusler systems
Chemical disorder as an engineering tool for spin polarization in Mn3Ga-based Heusler systems
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DOI：
10.1103/physrevb.91.094203
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发表时间：
2014-11
影响因子：
3.7
通讯作者：
S. Chadov;S. W. D'Souza;Lukas Wollmann;J. Kiss;G. Fecher;C. Felser
中科院分区：
文献类型：
--
作者：
S. Chadov;S. W. D'Souza;Lukas Wollmann;J. Kiss;G. Fecher;C. Felser
我们的研究强调了金属中的自旋极化机制，重点是不同自旋的导电电子的迁移率，而不是它们的数量。在这里，我们工程师的电子迁移率通过应用非化学计量变化引起的化学无序。作为一个实际的例子，我们讨论的计划，建立这样的变化在tetraxanthron ${\mathrm{Mn}}_{3}\mathrm{Ga}$赫斯勒材料。我们证明这种方法使用第一性原理计算的自旋投影电导率组件的基础上的Kubo-Greenwood形式主义。由此可见，在大多数情况下，即使少量替代Mn的其他过渡元素也可能导致自旋极化沿着四极轴显著增加。
Our study highlights spin-polarization mechanisms in metals by focusing on the mobilities of conducting electrons with different spins instead of their quantities. Here, we engineer electron mobility by applying chemical disorder induced by nonstoichiometric variations. As a practical example, we discuss the scheme that establishes such variations in tetragonal ${\mathrm{Mn}}_{3}\mathrm{Ga}$ Heusler material. We justify this approach using first-principles calculations of the spin-projected conductivity components based on the Kubo-Greenwood formalism. It follows that, in the majority of cases, even a small substitution of some other transition element instead of Mn may lead to a substantial increase in spin polarization along the tetragonal axis.