Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge
Temperature and bias dependence of Hanle effect in CoFe/MgO/composite Ge
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CoFe/MgO/复合Ge中汉勒效应的温度和偏压依赖性
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Sung
中科院分区：
文献类型：
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作者：
K. Jeon;B. Min;Youn;Hun;Chang;Y. Jo;Sung
我们研究了由重掺杂的表面层和中等掺杂的Ge衬底组成的复合n型Ge系统中Hanle效应的温度和偏压依赖性，使用三端Hanle测量。在300 K下获得了约5.1 kΩμm2的大自旋信号和约105 ps的自旋寿命。在5 K ~ 300 K的温度范围内测量了自旋信号、自旋寿命及其相对于偏置极性的不对称性。有趣的是，在低温下观察到了反Hanle效应，表明Ge中自旋极化的符号反转。
We have investigated the temperature and bias dependence of the Hanle effect in a composite n-type Ge system consisting of a heavily doped surface layer and a moderately doped Ge substrate, using three-terminal Hanle measurements. A large spin signal of ∼5.1 kΩμm2 and a spin lifetime of ∼105 ps are obtained at 300 K. The spin signal, spin lifetime, and their asymmetries with respect to the bias polarity have been measured over a temperature range from 5 K to 300 K. Intriguingly, an inverted Hanle effect, indicating the sign inversion of spin polarization in Ge, is observed at low temperature.