Gate-Recessed AlGaN/GaN ISFET Urea Biosensor Fabricated by Photoelectrochemical Method
Gate-Recessed AlGaN/GaN ISFET Urea Biosensor Fabricated by Photoelectrochemical Method
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DOI：
10.1109/jsen.2015.2506986
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发表时间：
2016-03-15
影响因子：
4.3
通讯作者：
Chiu, Ying-Shuo
中科院分区：
文献类型：
--
作者：
Lee, Ching-Ting;Chiu, Ying-Shuo
为了研制高灵敏度的离子敏感场效应晶体管（ISFET）尿素生物传感器，本文利用AlGaN/GaN异质结高电子面载流子浓度。此外，光电化学蚀刻方法和氧化方法，分别适用于凹陷的栅极区和直接生长的GaxAlyO 3敏感膜，以提高传感性能。与平面栅AlGaN/GaNISFET尿素生物传感器相比，由于栅凹陷区控制能力的提高，栅凹陷AlGaN/GaNISFET尿素生物传感器的灵敏度和灵敏度得到了明显改善。栅凹陷AlGaN/GaNISFET尿素生物传感器的最大灵敏度和尿素灵敏度分别提高到75.9mS/mm和18.15mA/pC（尿素）。与平面栅结构相比，栅凹结构的最大介电常数和尿素敏感度分别提高了17.7%和40.2%。此外，尿素生物传感器，分别在各种常见的干扰离子（葡萄糖，K+，Na+）的溶液中进行测量，以验证稳定性和可靠性。
To develop the high sensitive ion-sensitive field-effect-transistor (ISFET) urea biosensors, the AlGaN/GaN heterostructure with high electron sheet carrier concentration was utilized in this paper. Furthermore, the photoelectrochemical etching method and the oxidation method were, respectively, applied to recess the gate region and directly grow the GaxAlyO3 sensing membrane for enhancing sensing performances. Due to the progress of controlling ability from the gate-recessed region, the resulting characteristics of the gate-recessed AlGaN/GaN ISFET urea biosensors, including transconductance and sensing sensitivity, were obviously improved compared with the planar gate AlGaN/GaN ISFET urea biosensors. The maximum transconductance value and the urea sensitivity of the gate-recessed AlGaN/GaN ISFET urea biosensors were, respectively, improved to 75.9 mS/mm and 18.15 mA/pC(urea) compared with that of the planar gate ones. Compared with the planar gate structure, the maximum transconductance value and the urea sensitivity of the gate-recessed structure were improved 17.7% and 40.2%, respectively. Furthermore, the urea biosensors were, respectively, measured in the solution with various common interfering ions (glucose, K+, and Na+) to verify stability and reliability.