Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation
Correlation between surface oxide and photoluminescence properties of Si nanoparticles prepared by pulsed laser ablation
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DOI：
10.1007/s00339-004-2844-2
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发表时间：
2004-09
期刊：
影响因子：
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通讯作者：
I. Umezu;Kimihisa Matsumoto;M. Inada;T. Makino;A. Sugimura
中科院分区：
文献类型：
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作者：
I. Umezu;Kimihisa Matsumoto;M. Inada;T. Makino;A. Sugimura
采用脉冲激光烧蚀（PLA）方法在氢气中制备了氢化硅纳米颗粒。我们观察了自然氧化过程250天的红外（IR）吸收测量和研究自然氧化和光致发光（PL）性能之间的相关性。在800 nm、600-700 nm和400-500 nm附近发现了三个发光峰。这些PL峰波长依赖于Si-O键密度和显着的相关性与氧化物层的组成没有观察到。自然氧化是一种被动的表面改性方法。我们建议等离子体表面处理作为一种积极的方法。PL波长变化的表面处理，由于抑制自然氧化。表面修饰是控制硅纳米颗粒发光峰波长的重要手段。
Hydrogenated silicon nanoparticles were prepared by pulsed laser ablation (PLA) of Si target in hydrogen gas. We observed native oxidation process for 250 days by infrared (IR) absorption measurement and investigated correlation between native oxidation and photoluminescence (PL) properties. We found three PL peak regions, around 800 nm, 600–700 nm and 400–500 nm. These PL peak wavelengths depended on the Si-O bond density and remarkable correlation with composition of the oxide layer was not observed. The native oxidation is a passive method to modify the surface. We propose plasma surface treatment as an active method. The PL wavelength varied by the surface treatments due to suppression of native oxidation. The surface modification is an important technique to control PL peak wavelength of silicon nanoparticles.