Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications
Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications
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DOI：
10.1016/j.nima.2014.06.008
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发表时间：
2014-11-21
影响因子：
1.4
通讯作者：
Ullan, M.
中科院分区：
文献类型：
--
作者：
Pellegrini, G.;Fernandez-Martinez, P.;Ullan, M.
本文介绍了一种新概念的电荷本征倍增硅辐射探测器--低增益雪崩探测器（LGAD）。这些新器件基于通常用于光学和X射线探测应用的标准雪崩光电二极管（APD）。与标准APD探测器的主要区别是探测高能带电粒子所需的低增益，以及具有精细分段间距的可能性：这允许制造微带或像素器件，而不会受到雪崩探测器中通常发现的限制[1]。此外，适度的倍增值将允许制造具有与标准厚衬底相同的输出信号的更薄的器件。这些探测器的研究提供了关于这种改性电极几何形状控制和优化电荷倍增效应的能力的重要指示，以便在合理的偏置电压下完全恢复严重辐照的硅探测器的收集效率，与CERN高亮度大型强子对撞机（HL-LHC）实验的电压馈送限制兼容12]。例如，ATLAS跟踪器的最内部像素探测器层将暴露于高达2 x 10（16）MeV n（eq）/cm（2）的注量，而对于内部条带探测器区域，预期注量为1 x 10（15）n（eq）/cm（2）。在未辐照设备中实现的增益在辐照后也必须保持一定的效果，相对于标准结构具有更高的倍增因子，以便在诸如在对撞机实验中预期的恶劣环境中使用。(C)© 2014 Elsevier B. V.版权所有
This paper introduces a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain requested to detect high energy charged particles, and the possibility to have fine segmentation pitches: this allows fabrication of microstrip or pixel devices which do not suffer from the limitations normally found [1] in avalanche detectors. In addition, a moderate multiplication value will allow the fabrication of thinner devices with the same output signal of standard thick substrates.The investigation of these detectors provides important indications on the ability of such modified electrode geometry to control and optimize the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated silicon detectors, at reasonable bias voltage, compatible with the voltage feed limitation of the CERN High Luminosity Large Hadron Collider (HL-LHC) experiments 12]. For instance, the inner most pixel detector layers of the ATLAS tracker will be exposed to fluences up to 2 x 10(16) MeV n(eq)/cm(2), while for the inner strip detector region fluences of 1 x 10(15) n(eq)/cm(2) are expected.The gain implemented in the non-irradiated devices must retain some effect also after irradiation, with a higher multiplication factor with respect to standard structures, in order to be used in harsh environments such those expected at collider experiments. (C) 2014 Elsevier B.V. All rights reserved