SEU hardened memory cells for a CCSDS Reed-Solomon encoder
SEU hardened memory cells for a CCSDS Reed-Solomon encoder
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DOI：
10.1109/23.124134
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发表时间：
1991-12
影响因子：
1.8
通讯作者：
S. Whitaker;J. Canaris;K. Liu
中科院分区：
文献类型：
--
作者：
S. Whitaker;J. Canaris;K. Liu
报道了一种在空间环境中加固CMOS存储电路抗单粒子翻转(SEU)的设计技术。该设计技术提供了一种与扰乱事件的形状无关的恢复机制。文中给出了一个RAM单元和触发器的设计来演示该方法。该触发器被用于为空间站和探索者平台设计的里德-所罗门编码器的控制电路中。>；
A design technique to harden CMOS memory circuits against single event upset (SEU) in the space environment is reported. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and flip-flop design are presented to demonstrate the method. The flip-flop was used in the control circuitry for a Reed-Solomon encoder designed for the Space Station and Explorer platforms. >