Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots
Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots
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自组装p型Si/SiGe量子点的带内吸收和光电流光谱
DOI：
10.1063/1.1458531
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发表时间：
2002
影响因子：
4
通讯作者：
G. Abstreiter
中科院分区：
文献类型：
--
作者：
T. Fromherz;W. Mac;A. Hesse;G. Bauer;C. Miesner;K. Brunner;G. Abstreiter
在温度约为T=520℃的stranski - krstanow模式下生长的自组装SiGe量子点样品的红外透射光谱和光电流光谱中观察到不同类型的跃迁：在透射实验中，测量了由束缚到束缚跃迁引起的吸收线，而光电流光谱由束缚到连续介质的跃迁决定。对同一样品的两种类型跃迁的能量的实验测定允许对光谱中观察到的特征进行详细的讨论，以及对点中平均Ge含量的估计。
In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is measured whereas the photocurrent spectra are determined by bound-to-continuum transitions. The experimental determination of the energies of both types of transitions for the same sample allows a detailed discussion of the features observed in the spectra as well as an estimate of the average Ge content in the dots.