AIMS EUV: the actinic aerial image review platform for EUV masks

AIMS EUV: the actinic aerial image review platform for EUV masks
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AIMS EUV:EUV 掩模的光化航空图像审查平台

DOI:
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发表时间:
2011
期刊:
Advanced Lithography
影响因子:
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通讯作者:
W. Harnisch
W. Harnisch
中科院分区:
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文献类型:
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作者:
D. Hellweg;J. Ruoff;A. Herkommer;Joachim Stühler;Thomas Ihl;H. Feldmann;Michael Ringel;U. Strößner;S. Perlitz;W. Harnisch

文献摘要

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EUV掩模基础设施是将13.5 nm极端紫外线(EUV)波长引入量产的关键。具体地说,无缺陷掩模的制造是必不可少的,并且需要对潜在缺陷位置进行可印刷性分析(“审查”)。为此,卡尔·蔡司和SEMATECH EUVL面具基础设施财团对光化航空图像计量系统(AIMS™)进行了概念和可行性研究。在本文中,我们讨论了这项研究的主要结果。我们解释了系统的概念,讨论了预期的性能,并展示了发现最小尺寸缺陷的能力的模拟。我们证明了我们的EUV AIMS概念在技术上是可行的,并支持22 nm和16 nm半间距(HP)节点的缺陷审查要求。
EUV mask infrastructure is of key importance for the introduction of the 13.5nm extreme ultraviolet (EUV) wavelength into volume production. In particular, the manufacturing of defect free masks is essential and requires a printability analysis ("review") of potential defect sites. For this purpose, Carl Zeiss and the SEMATECH EUVL Mask Infrastructure consortium have performed a concept and feasibility study for an actinic aerial image metrology system (AIMS™). In this paper, we discuss the main results of this study. We explain the system concept, discuss the expected performance and show simulations of the capability to find minimum sized defects. We demonstrate that our EUV AIMS concept is technically feasible and supports the defect review requirements for the 22nm and 16nm half-pitch (hp) node.