InAs N-MOSFETs with record performance of Ion = 600 µA/µm at Ioff = 100 nA/µm (Vd = 0.5 V)
InAs N-MOSFETs with record performance of Ion = 600 µA/µm at Ioff = 100 nA/µm (Vd = 0.5 V)
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InAs N-MOSFET 在 Ioff = 100 nA/µm (Vd = 0.5 V) 时具有创纪录的 Ion = 600 µA/µm 性能
DOI：
10.1109/iedm.2013.6724639
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Chang S
中科院分区：
文献类型：
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作者：
Chang S
记录设置III-V MOSFET的报告。第一次表现出优于最先进的HEMT。对于10 nm非应变InAs表面沟道、Lg= 130 nm的MOSFET，在0.5 V工作电压下，导通电流高达Ion= 601 μA/μm（Ioff= 100 nA/μm）。这一创纪录的性能是通过gm，ext= 2.72 mS/μm和S = 85 mV/dec，DIBL = 40 mV/V实现的，这是外延和III-V/电介质界面工程的突破。在ns= 6.7× 1012 cm-2时，测得迁移率为7100 cm 2/V.s。器件模拟进一步阐明了III-V N-MOSFET的性能潜力。
Record setting III-V MOSFETs are reported. For the first time performance better than state-of-the-art HEMTs is demonstrated. For a MOSFET with 10 nm unstrained InAs surface channel and Lg= 130 nm operating at 0.5 V, on-current as high as Ion= 601 μA/μm (at fixed Ioff= 100 nA/μm) is achieved. This record performance is enabled by gm, ext= 2.72 mS/μm and S = 85 mV/dec, DIBL = 40 mV/V, resulting from breakthroughs in epitaxy and III-V/dielectric interface engineering. Measured mobility is 7100 cm2/V.s at ns= 6.7×1012cm-2. Device simulations further elucidate the performance potential of III-V N-MOSFETs.