Dissociative Chemisorption of O2 Inducing Stress Corrosion Cracking in Silicon Crystals
Dissociative Chemisorption of O2 Inducing Stress Corrosion Cracking in Silicon Crystals
复制标题
DOI：
10.1103/physrevlett.112.115501
复制
发表时间：
2014-03-18
影响因子：
8.6
通讯作者：
Sherman, Dov
中科院分区：
文献类型：
--
作者：
Gleizer, Anna;Peralta, Giovanni;Sherman, Dov
用于评估硅中（110）[110]和（111）[112]解理体系在室温和湿度下的解理能的断裂实验分别给出2.7 +/- 0.3和2.2 +/- 0.2 J/m（2），低于任何先前的测量值，并且与密度泛函理论（DFT）计算的3.46和2.88 J=m（2）的表面能不一致。然而，在惰性气体环境中，我们测量的值为3.5 +/- 0.2和2.9 +/- 0.2 J=m（2），与DFT一致，这表明在室温条件下硅裂纹萌生的应力腐蚀开裂情况以前未被检测到。这一点已被量子力学和分子力学的混合计算所证实.
Fracture experiments to evaluate the cleavage energy of the (110) [110] and (111) [112] cleavage systems in silicon at room temperature and humidity give 2.7 +/- 0.3 and 2.2 +/- 0.2 J/m(2), respectively, lower than any previous measurement and inconsistent with density functional theory ( DFT) surface energy calculations of 3.46 and 2.88 J=m(2). However, in an inert gas environment, we measure values of 3.5 +/- 0.2 and 2.9 +/- 0.2 J=m(2), consistent with DFT, that suggest a previously undetected stress corrosion cracking scenario for Si crack initiation in room conditions. This is fully confirmed by hybrid quantum- mechanicsmolecular- mechanics calculations.