Recombination Analysis in Cadmium Telluride Photovoltaic Solar Cells With Photoluminescence Spectroscopy
Recombination Analysis in Cadmium Telluride Photovoltaic Solar Cells With Photoluminescence Spectroscopy
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DOI：
10.1109/jphotov.2015.2483366
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发表时间：
2016-01-01
影响因子：
3
通讯作者：
Gloeckler, Markus
中科院分区：
文献类型：
--
作者：
Kuciauskas, Darius;Dippo, Pat;Gloeckler, Markus
我们利用光致发光（PL）光谱研究了开路电压为0.899 ~ 0.895 V的多晶CdS/CdTe光伏太阳能电池的复合。从PL发射光谱中，我们在结区和背接触区发现了活化能为0.11-0.12 eV的缺陷。在< 100 K时，器件的寿命与单晶相似，范围在300-400 ns之间。在100-300 K的高度寿命温度依赖性表明存在一个相对较浅的复合中心。因此，在CdTe太阳能电池中，寿命可能受到相对较浅缺陷的限制。
We used photoluminescence (PL) spectroscopy to study recombination in polycrystalline CdS/CdTe photovoltaic solar cells with open-circuit voltages in the range of 0.899-0.895 V. From PL emission spectra, we identified defects with an activation energy of 0.11-0.12 eV in the junction and back-contact regions. At < 100 K, lifetimes in devices were similar to those in single crystals and ranged from 300-400 ns. Strong lifetime temperature dependence at 100-300 K suggests the presence of a relatively shallow recombination center. Therefore, it is possible that in CdTe solar cells, lifetime is limited by relatively shallow defects.