Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
复制标题
在低温 Si 缓冲层上生长的具有低穿透位错密度的松弛 Ge0.9Si0.1 合金层
DOI：
--
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
C. Tung
中科院分区：
文献类型：
--
作者：
C. Peng;Zhen Zhao;H. Chen;J. Li;Yankui Li;L. W. Guo;D. Dai;Qizhang Huang;J. Zhou;Y. Zhang;T. Sheng;C. Tung
通过采用一种升压策略和一组低温GeySi1−y缓冲层，在Si（001）衬底上成功地生长了具有高Ge分数但低穿透位错密度的弛豫GexSi1−x外延层。我们发现，即使Ge分数上升到90%，在顶层的穿透位错密度可以保持低于5×106 cm−2，而结构的总厚度不超过1.7 μm。
Relaxed GexSi1−x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1−y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5×106 cm−2 in the top layers, while the total thickness of the structure is no more than 1.7 μm.