X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors
X-ray characterization of dislocation density asymmetries in heteroepitaxial semiconductors
复制标题
DOI：
10.1063/1.2936078
复制
发表时间：
2008-05
影响因子：
4
通讯作者：
B. Yarlagadda;Ángel Rodríguez;P. Li;Ravi Shankar R. Velampati;J. F. Ocampo;E. Suarez;P. Rago;D. Shah;J. Ayers;F. Jain
中科院分区：
文献类型：
--
作者：
B. Yarlagadda;Ángel Rodríguez;P. Li;Ravi Shankar R. Velampati;J. F. Ocampo;E. Suarez;P. Rago;D. Shah;J. Ayers;F. Jain
我们展示了一种X射线摇摆曲线方法，它可以检测(001)闪锌矿异质外延半导体层中位错密度的不对称性。这些位错存在于两种滑移系上，其位错线段沿[1−10]方向(A型)或[110]方向(B型)取向。这些滑移系上位错密度的不平衡导致对称X射线反射的摇摆曲线宽度出现明显的方位变化。一个近似的定量模型允许估计这两种滑移系上的位错密度。
We demonstrate an x-ray rocking curve method which allows detection of an asymmetry in the dislocation densities in an heteroepitaxial (001) zinc blende semiconductor layer. These dislocations exist on two types of slip systems with their misfit dislocation line segments oriented along either a [1−10] direction (type A) or a [110] direction (type B). An imbalance in the densities of dislocations on these slip systems produces an observable azimuthal variation in the rocking curve width for symmetric x-ray reflections. An approximate quantitative model allows the estimation of the dislocation densities on the two types of slip systems.