Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB
Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB
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DOI：
10.1088/1674-1056/ac657f
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发表时间：
2022
影响因子：
1.7
通讯作者：
Tao Yang
中科院分区：
文献类型：
--
作者：
Hong Wang;Zunren Lv;Shuai Wang;Haomiao Wang;Hongyu Chai;Xiaoguang Yang;Lei Meng;Chen Ji;Tao Yang
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging.
