Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass
Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass
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DOI：
10.1007/s003400000415
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
J. Philipps;T. Töpfer;H. Ebendorff‐Heidepriem;D. Ehrt;R. Sauerbrey;N. Borrelli
中科院分区：
文献类型：
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作者：
J. Philipps;T. Töpfer;H. Ebendorff‐Heidepriem;D. Ehrt;R. Sauerbrey;N. Borrelli
在小型微激光器装置上，研究了不同二极管泵浦的掺ErYb玻璃在1.5Kμm的调Q和连续运转。对于Q开关，我们使用了一种新型的PbS半导体量子点掺杂玻璃，与典型的吸收材料相比，它具有较低的饱和强度和快速的时间响应。连续激光输出功率为35兆瓦，斜率效率为16%。在调Q运转中，获得了1μJ的脉冲能量，重复频率为1-2 GHz，脉冲宽度约为30-50 ns，具体取决于吸收体厚度。
Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 μm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 μJ at repetition rates of 1–2 kHz and pulse durations of about 30–50 ns, depending on absorber thickness were obtained.