A novel load insensitive RF power amplifier using a load mismatch detection and curing technique
A novel load insensitive RF power amplifier using a load mismatch detection and curing technique
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DOI：
10.1109/rfic.2013.6569599
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
D. Ji;Joo-Seong Jeon;Junghyun Kim
中科院分区：
文献类型：
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作者：
D. Ji;Joo-Seong Jeon;Junghyun Kim
本文提出了一种新的负载不敏感的射频功率放大器（PA）的移动的手机使用的负载失配检测和固化技术。PA基于失配负载的信息自适应地控制可调谐输出匹配网络（TOMN），从而在失配负载处显著地增强PA性能，而在匹配负载处没有显著的性能降级。利用0.18 μm SOI FET与2 μ mInGaP/GaAsHBTPAMMIC集成，可以简单地实现负载失配检测器和TOMN。为了验证这一想法，PA模块已被设计和实现，特别是在负载失配条件下的线性度增强。对于1.95 GHz的WCDMA R '99信号，测量结果表明，与传统PA相比，在最差ACLR负载角下，输出功率为28.25 dBm的ACLR改善了13.7 dB。通过这种方式，所提出的负载不敏感PA可以在2.5：1的电压驻波比（VSWR）下在整个负载角上将ACLR保持在-37dBc以下。
This paper proposes a new load insensitive RF power amplifier (PA) for mobile handsets using a load mismatch detection and curing technique. The PA controls a tunable output matching network (TOMN) adaptively based on the information of a mismatched load, thereby enhancing PA performances dramatically at a mismatched load without substantial performance degradation at a matched load. A load mismatch detector and TOMN can simply be implemented by using 0.18-μm silicon on insulator (SOI) FET that are integrated with 2-μm InGaP/GaAs HBT PA MMIC into a single module. To verify the idea, the PA module has been designed and implemented especially for a linearity enhancement under load mismatch condition. With WCDMA R'99 signal at 1.95 GHz, the measured results showed that ACLR at output power of 28.25 dBm was improved by as much as 13.7 dB on the worst ACLR-load angle compared to a conventional PA. In this way, the proposed load insensitive PA can keep ACLR under -37 dBc all over the load angle at 2.5:1 voltage standing wave ratio (VSWR).