Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
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DOI：
10.1063/1.1508414
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发表时间：
2002-09
影响因子：
4
通讯作者：
A. Yasan;R. Mcclintock;K. Mayes;S. Darvish;H. Zhang;P. Kung;M. Razeghi;Sungho Lee;J. Y. Han
中科院分区：
文献类型：
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作者：
A. Yasan;R. Mcclintock;K. Mayes;S. Darvish;H. Zhang;P. Kung;M. Razeghi;Sungho Lee;J. Y. Han
基于AlInGaN/AlInGaN多量子威尔斯阱，比较了在氢化物气相外延GaN衬底和蓝宝石衬底上生长的峰值发射波长为340 nm的紫外发光二极管（LED）的性能。在GaN衬底上生长的LED，其微分电阻低至13 Ω，输出功率比在蓝宝石衬底上生长的相同结构的LED高一个数量级以上。由于GaN的热导率较高，与蓝宝石上生长的器件相比，LED的输出功率在较高的注入电流下饱和。
Based on AlInGaN/AlInGaN multiquantum wells, we compare properties of ultraviolet light-emitting diodes (LED) with peak emission at 340 nm grown on free-standing hydride vapor phase epitaxially grown GaN substrate and on sapphire. For the LED grown on GaN substrate, a differential resistance as low as 13 Ω and an output power of more than one order of magnitude higher than that of the same structure grown on sapphire are achieved. Due to higher thermal conductivity of GaN, output power of the LEDs saturates at higher injection currents compared to the devices grown on sapphire.