InGaAsP Photonic Band Gap Crystal Membrane Microresonators
InGaAsP Photonic Band Gap Crystal Membrane Microresonators
复制标题
InGaAsP 光子带隙晶体膜微谐振器
DOI：
10.1116/1.590433
复制
发表时间：
1998
影响因子：
1.4
通讯作者：
A. Yariv
中科院分区：
文献类型：
--
作者：
A. Scherer;O. Painter;B. D’Urso;R. Lee;A. Yariv
我们在介质材料的薄板中微制造了二维(2D)光子带隙结构，以定义反射器和高Q微谐振器。通过选择性地省略2D光子晶体中的孔，可以定义光学微腔和面内微谐振器开关。我们用时域有限差分方法设计了这种结构，并研究了光刻二维带隙调谐对发射波长为1.55µm的InGaAs/InGaAsP多量子阱材料发射光谱的影响。
We have microfabricated two-dimensional (2D) photonic band gap structures in a thin slab of dielectric material to define reflectors and high-Q microresonators. By selectively omitting holes from the 2D photonic crystal, optical microcavities, and in-plane microresonator switches can be defined. We have designed this structure with a finite difference time domain approach, and demonstrate the effect of lithographic 2D band gap tuning on the emission spectra of InGaAs/InGaAsP multiple quantum well material emission wavelength of 1.55 µm.