Pre-roughening induced deconstruction in Si and Ge(001) type crystal surfaces
Pre-roughening induced deconstruction in Si and Ge(001) type crystal surfaces
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Si 和 Ge(001) 型晶体表面的预粗糙化诱导解构
DOI：
10.1088/0305-4470/30/2/007
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
M. Nijs
中科院分区：
文献类型：
--
作者：
M. Nijs
Si和Ge的（001）面具有单轴结构，其在每个单原子台阶处改变方向。这种类型的拓扑结构是不寻常的和新的表面粗糙化和重建相变的理论。它可以合并到实体对实体模型描述中。该相图包括预粗糙化过渡和无序平坦相，而不需要阶梯-阶梯相互作用。这与Si（001）中的重构之间的竞争可以用一个广义的四态钟步模型来描述。这导致了Si（001）和Ge（001）经历预粗化诱导的同时解构转变的预测。
The (001) facets of Si and Ge have a uniaxial structure which changes direction at each mono-atomic step. This type of topology is unusual and new for the theory of surface roughening and reconstruction phase transitions. It can be incorporated into the solid-on-solid model description. The phase diagram includes pre-roughening transitions and disordered flat phases without the need for step - step interactions. The competition between this and the reconstruction in Si(001) can be described by a generalized 4-state clock-step model. This leads to the prediction that Si(001) and Ge(001) undergo a pre-roughening induced simultaneous deconstruction transition.