Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus-doped ZnMgTe layers grown by MOVPE
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掺杂剂输运速率对 MOVPE 生长磷掺杂 ZnMgTe 层光致发光和电学性能的影响

DOI:
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发表时间:
2012
期刊:
physica status solodi
影响因子:
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通讯作者:
Mitsuhiro
Mitsuhiro
中科院分区:
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文献类型:
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作者:
Saito;Katsuhiko;Saeki;Takuya Tanaka;Tooru;Guo;Qixin;Nishio;Mitsuhiro

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