Impurity incorporation in semipolar (1-101)GaN grown on Si substrate
Impurity incorporation in semipolar (1-101)GaN grown on Si substrate
复制标题
Si 衬底上生长的半极性 (1-101)GaN 中的杂质掺入
DOI：
10.1088/0268-1242/27/2/024006
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发表时间：
2012
影响因子：
1.9
通讯作者：
and Y.Honda
中科院分区：
文献类型：
--
作者：
N.Sawaki;K.Hagiwara;T.Hikosaka;and Y.Honda
研究了（1- 101）GaN中的碳掺杂，其中最顶表面由氮终止。在N2气氛下，以C2 H2为源前驱体，对MOVPE进行了有意掺杂.显示p型导电的样品在低温阴极发光光谱中在361 nm处显示出强但宽的峰。对这些样品进行FTIR分析，发现沿着在945 cm− 1处的新吸收峰以及在888 cm− 1处的AlN-A 1（LO）声子模式。西姆斯分析表明，无意中高度掺杂的铝样品。945 cm-1的峰被指定为与Al-C键相关的局部振动模式。
Carbon doping was investigated in (1-1 0 1) GaN, where the topmost surface is terminated by nitrogen. Intentional doping was performed supplying C 2 H 2 as the source precursor during the MOVPE growth under N 2 ambient. The sample showing p-type conduction exhibited a strong but broad peak at 361 nm in a low-temperature cathode luminescence spectrum. FTIR analyses were performed on these samples and a new absorption peak at 945 cm− 1 was found along with an AlN–A 1 (LO) phonon mode at 888 cm− 1. SIMS analyses showed unintentionally highly doped Al in the sample. The 945 cm− 1 peak was assigned to a local vibration mode related to an Al–C bond.