Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode
Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode
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AlGaN/GaN谐振隧道二极管退化现象的理论研究
DOI：
10.7498/aps.62.217301
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发表时间：
2013-11
影响因子：
1
通讯作者：
Zhang Jin-Cheng
中科院分区：
文献类型：
--
作者：
Chen Hao-Ran;Yang Lin-An;Zhu Zhang-Ming;Lin Zhi-Yu;Zhang Jin-Cheng
本文从理论上研究了GaN基共振隧穿二极管（RTD）的退化现象。通过自洽求解在AlGaN/GaN/AlGaN量子阱中引入3个实验获得的深能级陷阱中心时的Poisson-Schrodinger排列，计算和研究了陷阱中心对GaN基RTD的影响.结果表明，GaN基RTD负微分电阻特性的退化实际上是激活能和缺陷密度共同作用的结果。高激活能的深能级俘获中心是导致负阻特性退化的主要原因，因为电离几率与激活能成指数关系。
In this paper we study theoretically the degradation phenomenon of GaN-based resonant tunneling diode (RTD). The effects of trapping centers on GaN-based RTD are calculated and studied by self-consistently solving the Poisson-Schrodinger aligns when three experimentally obtained deep-level trapping centers are introduced into the AlGaN/GaN/AlGaN quantum well. Results show that the degradations of negative differential resistance (NDR) characteristic in GaN-based RTDs are actually caused by the combined action of the activation energy and the defect density. The deep-level trapping center with high activation energy plays a dominating role in the degradation of NDR characteristics because the probability of ionization is exponentially proportional to the activation energy.