Atomic scale flattening and hydrogen termination of the Si(001) surface by wet-chemical treatment
Atomic scale flattening and hydrogen termination of the Si(001) surface by wet-chemical treatment
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通过湿化学处理对 Si(001) 表面进行原子级平坦化和氢封端
DOI：
10.1116/1.580403
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
H. Tokumoto
中科院分区：
文献类型：
--
作者：
Y. Morita;H. Tokumoto
采用双真空扫描隧道显微镜在原子尺度上分析了湿化学制备的Si（001）表面。用2.5%HF处理的表面是原子级粗糙的，并且被溶液中OH离子蚀刻产生的无特征的波纹覆盖。在不控制氧化物去除方向的情况下，通过HF：HCl=1：19混合溶液处理的表面也是原子级粗糙的，但其特征在于扭结形态，这反映了Si（001）表面的晶体学性质。另一方面，由相同的混合溶液但通过控制氧化物去除方向处理的表面被规则的单原子台阶和平台上的有序二氢化物相覆盖。从这些事实中，我们已经证实了这些因素，OH离子的浓度和氧化物去除的方式，在制备原子级平坦的Si（001）表面中起作用。
An ultrahigh vacuum scanning tunneling microscopy has been applied to analyze wet‐chemically prepared Si(001) surfaces in an atomic scale. The surface treated by 2.5% HF is atomically rough and is covered by featureless corrugations resulting from an etching by OH ions in the solution. The surface treated by HF:HCl=1:19 mixed solution without controlling an oxide‐removal direction is also atomically rough, but is characterized by a kinkful morphology, which reflects the crystallographic nature of the Si(001) surface. On the other hand, the surface treated by the same mixed solution but by controlling the oxide‐removal direction is covered by regular monatomic steps and the ordered dihydride phase on the terrace. From these facts, we have confirmed that these factors, the concentration of the OH ions and the way of the oxide‐removal, play roles in the preparation of the atomically flat Si(001) surface.