Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
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DOI：
10.1063/1.365963
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发表时间：
1997-08-15
影响因子：
3.2
通讯作者：
Shur, MS
中科院分区：
文献类型：
--
作者：
Bhapkar, UV;Shur, MS
我们提出了速度场模拟的n-掺杂，纤锌矿相GaN的温度在77和1000 K之间，使用系综Monte Carlo技术。采用三谷能带模型，考虑了电离杂质、极性光学声子、声学声子、压电和区间散射机制。电子简并和加热也占。AlGaN/GaN异质结构中的二维电子气的性质也通过对体GaN进行模拟来估计，其中电子浓度超过电离的施主浓度十到一百倍。模拟结果表明，在77 ~ 1000 K温度范围内，二维电子气和施主离子浓度为10（16）cm ~（-3）的体材料中均能获得3.3 × 10（7）~ 2.1 × 10（7）cm/s的稳态漂移速度峰值。此外，模拟预测，在GaN中的二维电子气将表现出低场迁移率的数量级大于散装材料，与实验结果一致。(C)1997年美国物理学会。
We present velocity-field simulations of n-doped, wurtzite-phase GaN for temperatures between 77 and 1000 K using an ensemble Monte Carlo technique. A three-valley model of the band structure is assumed, and the ionized impurity, polar optical phonon, acoustic phonon, piezoelectric, and intervally scattering mechanisms are considered. Electron degeneracy and heating are also accounted for. Properties of the two dimensional electron gas in AlGaN/GaN heterostructures are also estimated by performing simulations on bulk GaN in which the electron concentration exceeds the ionized donor concentration by factors of ten to one hundred. The simulations predict that peak steady-state drift velocities ranging from 3.3x10(7) to 2.1x10(7) cm/s for temperatures between 77 and 1000 K can be achieved in both the two dimensional electron gas and in the bulk material with an ionized donor concentration of 10(16) cm(-3). Furthermore, the simulations predict that the two-dimensional electron gas in GaN will exhibit a low-field mobility an order of magnitude greater than the bulk material, in agreement with experimental results. (C) 1997 American Institute of Physics.