Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
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DOI：
10.1109/led.2010.2047239
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发表时间：
2010-07-01
影响因子：
4.9
通讯作者：
Fuyuki, Takashi
中科院分区：
文献类型：
--
作者：
Okamoto, Dai;Yano, Hiroshi;Fuyuki, Takashi
我们提出了一种制造具有高反型沟道迁移率的4H - SiC金属 - 氧化物 - 半导体场效应晶体管（MOSFET）的新技术。通过使用三氯氧磷（POCl₃）进行氧化后退火，将P原子掺入到SiO₂/4H - SiC（0001）界面。4H - SiC导带边附近的界面态密度显著降低，并且在1000℃下进行POCl₃退火时，（0001）Si面横向4H - SiC MOSFET的峰值场效应迁移率提高到89 cm²/（V·s）。
We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC (0001) interface by postoxidation annealing using phosphoryl chloride (POCl3). The interface state density near the conduction band edge of 4H-SiC was reduced significantly, and the peak field-effect mobility of lateral 4H-SiC MOSFETs on (0001) Si face was improved to 89 cm(2)/V . s by POCl3 annealing at 1000 degrees C.