PHOTOCAPACITANCE STUDY OF N-GAAS ELECTROLYTE INTERFACES
PHOTOCAPACITANCE STUDY OF N-GAAS ELECTROLYTE INTERFACES
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DOI：
10.1002/bbpc.19870910430
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发表时间：
1987-04-01
期刊：
影响因子：
--
通讯作者：
CACHET, H
中科院分区：
文献类型：
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作者：
ALLONGUE, P;CACHET, H
电化学光电容谱（EPS）用于测定n-GaAs/水电解质结的界面态分布。发现两个态（Ec- 1.30eV和Ec-1.05eV）与GaAs的腐蚀有关。它还表明，钌诱导额外的状态0.2 eV以上的价带。对它在GaAs稳定化中的作用给出了新的认识。
The electrochemical photocapacitance spectroscopy (EPS) is used to determine the interface state distribution at n‐GaAs/aqueous electrolyte junctions. Two states (Ec— 1.30eV andEc— 1.05 eV) are found to be related to corrosion of GaAs. It is also shown that ruthenium induces additional states 0.2 eV above the valence band. A new insight of its effect on the stabilization of GaAs is given.