Thermoelectric Properties of Impurity-Doped Mg2Sn
Thermoelectric Properties of Impurity-Doped Mg2Sn
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DOI：
10.1007/s11664-019-07093-x
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发表时间：
2019-05
影响因子：
2.1
通讯作者：
J. Tani;T. Shinagawa;M. Chigane
中科院分区：
文献类型：
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作者：
J. Tani;T. Shinagawa;M. Chigane
研究了采用化学还原和放电等离子烧结相结合的方法制备的掺杂半导体镁锡的霍尔效应和热电性能。添加少量IA、IIIA、IB、IIIB和VB族元素[Al_2O_3、B_2O_3、Sb_2O_3、La(OH)_3、Li_2CO_3、Ag2O、CuO、Ga_2O_3、In_2O、Na_2CO_3或Y_2O]的氧化物、氢氧化物或碳酸盐来改善镁锡的热电性能。X-射线衍射仪进行物相鉴定，主相为立方相的镁锡，次要相为正交相和三方相的镁锡、氧化镁、锡，以及添加剂的化学还原得到的金属间化合物。在Mg_2Sn中掺入Bi、Sb、Li、Na、Ga等元素对载流子输运性质有显著影响。用Li2CO3和Na2O3制得的p型镁锡的无量纲热电优值(ZT)在674K和577K时分别达到最大值0.25和0.11。然而，用Bi2O3和Sb2O3制备的当时型镁锡在476K和574K时的ZT值分别为0.057和0.058。
The Hall effect and thermoelectric properties of impurity-doped semiconducting Mg2Sn, fabricated using a process combining chemical reduction and spark plasma sintering, were investigated. A small amount of the oxides, hydroxide, or carbonate of IA, IIIA, IB, IIIB, and VB group elements [Al2O3, Bi2O3, Sb2O3, La(OH)3, Li2CO3, Ag2O, CuO, Ga2O3, In2O3, Na2CO3, or Y2O3] were added to improve the thermoelectric performance of Mg2Sn. X-ray diffraction was used for phase identification, and the patterns revealed that the major phase was cubic Mg2Sn, while the minor phases were orthorhombic and trigonal Mg2Sn, MgO, Sn, and intermetallics obtained by the chemical reduction of the additives. The doping of Bi, Sb, Li, Na, and Ga elements into Mg2Sn was found to significantly affect the carrier transport properties. The maximum values of the dimensionless thermoelectric figure-of-merit (ZT) for thep-type Mg2Sn fabricated using Li2CO3and Na2O3were 0.25 at 674 K and 0.11 at 577 K, respectively. However, theZTvalues for then-type Mg2Sn fabricated using Bi2O3and Sb2O3were 0.057 at 476 K and 0.058 at 574 K, respectively.