A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy
A new low-power RTD-based 4:1 multiplexer IC using an InP RTD/HBT MMIC technoligy
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DOI：
10.1109/iciprm.2010.5516385
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发表时间：
2010-07
期刊：
影响因子：
--
通讯作者：
Jongwon Lee;Sunkyu Choi;Kyounghoon Yang
中科院分区：
文献类型：
--
作者：
Jongwon Lee;Sunkyu Choi;Kyounghoon Yang
提出并研制了一种采用谐振调谐二极管（RTD）的低功耗4：1多路复用器（MUX）集成电路。提出的4：1 MUX拓扑结构由两个基于RTD的2：1 MUX IC和一个2：1选择器IC组成。通过使用RTD独特的NDR（负差分电阻）特性，与传统的基于III-V晶体管的拓扑结构相比，所提出的IC实现了显著降低的直流功耗。所制作的集成电路显示15 Gb/s的操作与直流功耗为80 mW。
A low-power 4:1 multiplexer (MUX) IC using Resonant Tunneling Diodes (RTDs) is proposed and fabricated. The proposed 4:1 MUX topology consists of two RTD-based 2:1 MUX ICs and a 2:1 selector IC. By using the unique NDR (Negative Differential Resistance) characteristics of the RTD, the proposed IC has achieved a significantly reduced dc power consumption compared to the conventional III-V transistor-based topology. The fabricated IC shows 15 Gb/s operation with dc power consumption of 80 mW.