Electron conduction in molecular wires. II. Application to scanning tunneling microscopy

Electron conduction in molecular wires. II. Application to scanning tunneling microscopy
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分子线中的电子传导。

DOI:
10.1063/1.468315
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发表时间:
1994
影响因子:
4.4
通讯作者:
M. Ratner
M. Ratner
中科院分区:
化学2区
文献类型:
--
作者:
V. Mujica;M. Kemp;M. Ratner

文献摘要

被引文献

相似文献

我们使用散射方法来计算分子线的电导。我们表明,电导会出现三种线长度依赖性:衰减可以是指数衰减、多项式衰减或非常慢,具体取决于储存库费米能级是否位于分子能带的远处、内部或边缘。我们使用形式主义来讨论尖端诱导压力和扫描隧道显微镜(STM)成像的简单模型,并指出一种矛盾的情况,即电流会随着尖端压力的增加而减少。我们还考虑了这种形式主义与分子内非绝热电子转移(ET)传统理论的联系。
We use scattering methods to calculate the conductance of molecular wires. We show that three kinds of wire length dependences of the conductance arise: the decay can be exponential, polynomial, or very slow, depending on whether the reservoir Fermi level lies far from, in, or at the edge of the molecular energy band. We use the formalism to discuss simple models of tip‐induced pressure and of imaging in scanning tunneling microscopy (STM), and point out a paradoxical situation in which the current can decrease with increased tip pressure. We also consider the connection of this formalism with the conventional theory of intramolecular, nonadiabatic electron transfer (ET).