(Invited) Investigations into the Formation of Germanene Using Electrochemical Atomic Layer Deposition (E-ALD)
(Invited) Investigations into the Formation of Germanene Using Electrochemical Atomic Layer Deposition (E-ALD)
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DOI：
10.1149/06606.0129ecst
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发表时间：
2015-04
期刊：
影响因子：
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通讯作者：
Maria Ledina;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;M. Soriaga;J. Stickney
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文献类型：
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作者：
Maria Ledina;Xuehai Liang;Youn-Geun Kim;Jin-Young Jung;Brian R. Perdue;C. Tsang;M. Soriaga;J. Stickney
本文将讨论锗烯的电化学生成。锗烷烯应是Ge的单层同素异形体。利用电化学扫描隧道显微镜（EC-STM）、伏安法、库仑法和显微拉曼光谱等技术研究了锗烯的电化学生成过程。对Au（111）的研究表明，Ge的初始沉积动力学缓慢，有些不稳定，而Ge的自限层是稳定的，原子间距约为0.44 nm ± 0.02 nm。对Ge纳米薄膜进行了显微拉曼光谱分析，但仅在一个区域显示出接近290 cm^（-1）的位移。鉴于STM结果，看来需要增加锗烯域的相干性，以便更一致地产生拉曼信号。提出的数据表明，锗烯已形成电化学，虽然只有少数物种。
This paper will discuss possible formation of germanene electrochemically. Germanene should be a single layer allotrope of Ge. The techniques of in-situ electrochemical STM (EC-STM), voltammetry, coulometry, and micro-Raman have been used to investigate the electrochemical formation of germanene. Studies on Au(111) show that the initial deposition of Ge is kinetically slow and somewhat unstable, whereas the self-limited layer of Ge is stable and shows atomic distances of about 0.44 nm ± 0.02 nm. Micro-Raman was performed on Ge nanofilms, but only displayed a shift near 290 cm^(-1) in one area. Given the STM results, it appears that the coherence of the germanene domains will need to be increased in order to more consistently produce the Raman signal. The data presented suggest that germanene has been formed electrochemically, although only as a minority species.