Organic NIR Photodetectors: Pushing Photodiodes Beyond 1000 nm
Organic NIR Photodetectors: Pushing Photodiodes Beyond 1000 nm
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DOI：
10.21127/yaoyigc20200039
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发表时间：
2021-06
期刊：
影响因子：
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通讯作者：
S. Rasmussen;Spencer J. Gilman;Evan W. Culver;and Wyatt D. Wilcox
中科院分区：
文献类型：
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作者：
S. Rasmussen;Spencer J. Gilman;Evan W. Culver;and Wyatt D. Wilcox
低能隙(Eg<；1.5 eV)共轭聚合物的合成进展已经产生了能够吸收近红外光(800-2500 nm)的有机材料，这些材料于2007年首次应用于光电二极管近红外探测器，作为更传统的无机器件的替代品。尽管有机近红外光电探测器的发展取得了持续的进展，但它们有效探测近红外光谱低能部分波长的能力仍然有限。综述了迄今为止关于能够探测超过1000 nm的光的基于光电二极管的器件的生产的努力。
Advances in the synthesis of low bandgap ( E g < 1.5 eV) conjugated polymers has produced organic materials capable of absorbing near-infrared (NIR) light (800—2500 nm), with these materials first applied to photodiode NIR detectors in 2007 as an alternative to more traditional inorganic devices. Although the development of organic NIR photodetectors has continued to advance, their ability to effectively detect wavelengths in the low-energy portion of the NIR spectrum is still limited. Efforts to date concerning the production of photodi-ode-based devices capable of detecting light beyond 1000 nm are reviewed.