λ∼4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures
λ∼4–5.3 μm intersubband emission from InGaAs–AlAsSb quantum cascade structures
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InGaAs-AlAsSb 量子级联结构的 λ〜4–5.3 μm 子带间发射
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
M. Hopkinson
中科院分区：
文献类型：
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作者：
D. Revin;L. Wilson;E. Zibik;R. Green;J. Cockburn;M. Steer;R. Airey;M. Hopkinson
In 0. 53 Ga 0. 47 As-AlAs 0. 56 Sb 0.44材料系统与InP晶格匹配，具有很大的导带不连续性（≤ 1. 6 eV），与量子级联激光器波导设计和制造技术相兼容，是一种有吸引力的短波长量子级联激光器候选材料。本文报道了In 0. 53 Ga 0. 47 As-AlAs 0. 56 Sb 0.44量子级联结构在λ = 4-5.3 μm波长范围内的发光。清晰的子带间电致发光峰被观察到接近设计波长，在30-40 meV的范围内的半峰全宽。
The In0.53Ga0.47As–AlAs0.56Sb0.44 materials system, lattice matched to InP, is an attractive candidate for short wavelength quantum cascade lasers due to the very large conduction band discontinuity (∼1.6 eV) and compatibility with well established quantum cascade laser waveguide design and fabrication technology. In this letter we report the operation of In0.53Ga0.47As–AlAs0.56Sb0.44 quantum cascade structures emitting in the wavelength range λ∼4–5.3 μm. Clear intersubband electroluminescence peaks are observed close to the design wavelengths, with full widths at half maximum in the range of ∼30–40 meV.